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High Voltage IGBT with Diode
IXSN 35N120AU1 VCES
IC25 VCE(sat)
3 2
= 1200 V = 70 A = 4V
4
1
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC PD VISOL TJ TJM Tstg Md Weight Symbol
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 * VCES, TJ = 125C RG = 22 W, non repetitive TC = 25C 50/60 Hz IISOL 1 mA IGBT Diode t = 1 min t=1s
Maximum Ratings 1200 1200 20 30 70 35 140 ICM = 70 @ 0.8 VCES 10 300 175 2500 3000 -55 ... +150 150 -55 ... +150 V A V V A A A A ms W W V~ V~ C C C
miniBLOC, SOT-227 B
1 2
4 3 1 = Emitter , 2 = Gate, 3 = Collector 4 = Emitter
Either Emitter terminal can be used as Main or Kelvin Emitter
Features
q
q
q q
q
q
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
q
International standard package miniBLOC (ISOTOP) compatible Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ Low VCE(sat) - for minimum on-state conduction losses Fast Recovery Epitaxial Diode - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25C TJ = 125C 8 750 15 100 4 V V mA mA nA
Applications
q q
BVCES VGE(th) ICESy IGES VCE(sat)
IC IC
= 5 mA, VGE = 0 V = 4 mA, VCE = VGE
q q q
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Advantages
q
V
q q
Space savings Easy to mount with 2 screws High power density
Device must be heat sunk during high temperature leackage test to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions, and dimensions.
92519E (12/96)
(c) 2000 IXYS All rights reserved
1-4
IXSN35N120AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 26 170 3900 VCE = 25 V, VGE = 0 V, f = 1 MHz 295 60 150 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, VCE = 0.8 * VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, VCE = 0.8 * VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 40 70 80 150 400 500 10 80 150 400 700 6 15 900 700 190 60 100 S A pF pF pF nC nC nC ns ns ns ns mJ ns ns ns ns mJ mJ 0.42 K/W 0.05 K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri td(off) tfi Eon Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle d 2 % VCE = 10 V, VGE = 15 V
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.35 32 225 40 35 60 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 540 V TJ = 100C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C
0.71 K/W
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXSN35N120AU1
Fig. 1 Saturation Characteristics
70
TJ = 25C
Fig. 2 Output Characterstics
250
11V TJ = 25C VGE = 15V
VGE =15V
13V
60
200
IC - Amperes
IC - Amperes
50 40 30 20 10
7V 9V
13V
150 100 50 0
11V
9V 7V
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
TJ = 25C
Fig. 4 Temperature Dependence of Output Saturation Voltage
1.4
VGE=15V
1.3
IC = 70A
VCE(sat) - Normalized
1.2 1.1 1.0 0.9 0.8
IC =1 7.5A IC = 35A
VCE - Volts
6 5 4 3 2 1 0 8 9 10 11 12 13 14 15
IC = 70A IC = 35A IC = 17.5A
0.7 -50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
50
VCE = 10V
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.3
40
BV / VGE(th) - Normalized
1.2 1.1 1.0 0.9 0.8 0.7 -50
VGE(th) IC = 4mA
IC - Amperes
30 20
TJ = 125C
BVCES IC = 3mA
10 0
TJ = 25C TJ = - 40C
4
5
6
7
8
9
10 11 12 13 14 15
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXSN35N120AU1
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
1250
TJ = 125C RG = 10W
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
25 1250
TJ = 125C IC = 35A
18
tfi - nanoseconds
tfi - nanoseconds
1000
tfi
20
1000
tfi
17
Eoff - millijoules
750
15
750
16
500
Eoff
10
500
Eoff
15
250
0
10
20
30
40
50
60
5 70
250
0
10
20
30
40
14 50
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15 12
IC = 35A VCE = 500V
Fig.10 Turn-Off Safe Operating Area
100
10
TJ = 125C RG = 2.7W dV/dt < 5V/ns
9 6 3 0 0 50 100 150 200
IC - Amperes
VGE- Volts
1
0.1
0.01 0 200 400 600 800 1000 1200
QG - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
ZthjJC - K/W
0.1
D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
4-4
Eoff - millijoules

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